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s is always that of your substrate content. The lattice mismatch causes a significant buildup of pressure energy in Ge layers epitaxially developed on Si. This pressure energy is largely relieved by two mechanisms: (i) technology of lattice dislocations on the interface (misfit dislocations) and (ii) elastic deformation of each the substrate along
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A percentile rank with the political steadiness of the best developing state, derived from Environment Lender governance indicators.Polycrystalline Ge slender movies have captivated sizeable awareness as prospective products for use in different electronic and optical units. We a short while ago developed a lower-temperature stable-period crystalli